Edited by H. Hasegawa 、M. Hong 、Z. H. Lu 、S. J. Pearton
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Edited by Michael Coey 、Laura H. Lewis 、Bao-Min Ma 、Thomas Schrefl 、Ludwig Schultz 、Josef Fidler 、Vincent G. Harris 、Ryusuke Hasegawa 、Akihisa Inoue 、Michael McHen
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Compound semiconductors, such as GaAs and InP, typically have relatively high surface recombination velocities compared to silicon, and are subject to disruption of the surface during device processin
Contains papers from an April 1999 symposium, in sections on permanent magnet processing, intrinsic properties of permanent magnetic materials, nanoscale hard magnetism, permanent magnet applications,
