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【簡體曬書區】 單本79折,5本7折,活動好評延長至5/31,趕緊把握這一波!

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Edited by H. Hasegawa 、M. Hong 、Z. H. Lu 、S. J. Pearton (1)
Edited by K. S. Jones 、S. J. Pearton 、H. Kanber (1)
Edited by M. Stavola 、S. J. Pearton 、G. Davies (1)
Edited by S. J. Pearton 、D. K. Sadana 、J. M. Zavada (1)
Edited by S. J. Pearton 、F. Ren 、R. J. Shul 、C. -S. Wu (1)
Edited by S. J. Pearton 、R. J. Shul 、E. Wolfgang 、F. Ren 、S. Tenconi (1)
Edited by V. Swaminathan 、S. J. Pearton 、M. O. Manasreh (1)
R. J. Shul (EDT)/ S. J. Pearton (EDT) (1)
Shuji Nakamura/ S. J. Pearton/ Gerhard Fasol (1)

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Cambridge University Press (5)
CAMBRIDGE UNIVERSITY PRESS (2)
Springer Verlag (2)

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The Blue Laser Diode ― The Complete Story

1.The Blue Laser Diode ― The Complete Story

作者:Shuji Nakamura; S. J. Pearton; Gerhard Fasol  出版社:Springer Verlag  出版日:2000/10/01 裝訂:精裝
From the reviews of the first edition: "The technical chapters will be lapped up by semiconductor specialists keen to know more [...] the book includes fascinating material that answers the question:
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III-V Electronic and Photonic Device Fabrication and Performance:VOLUME300
90折

2.III-V Electronic and Photonic Device Fabrication and Performance:VOLUME300

作者:Edited by K. S. Jones ; S. J. Pearton ; H. Kanber  出版社:Cambridge University Press  出版日:1993/08/25 裝訂:平裝
Proceedings of the MRS symposium, held in San Francisco in April 1993. In particular, processing modules such as wet and dry etching, ohmic and Schottky contact formation, dielectric deposition, impla
定價:1845 元, 優惠價:9 1661
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Handbook of Advanced Plasma Processing Techniques

3.Handbook of Advanced Plasma Processing Techniques

作者:R. J. Shul (EDT); S. J. Pearton (EDT)  出版社:Springer Verlag  出版日:2000/10/01 裝訂:精裝
Pattern transfer by dry etching and plasma-enhanced chemical vapor de­ position are two of the cornerstone techniques for modern integrated cir­ cuit fabrication. The success of these methods has also
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Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures:VOLUME184
90折

4.Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures:VOLUME184

作者:Edited by V. Swaminathan ; S. J. Pearton ; M. O. Manasreh  出版社:Cambridge University Press  出版日:1991/01/25 裝訂:平裝
定價:1845 元, 優惠價:9 1661
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Defects in Electronic Materials:VOLUME104
90折

5.Defects in Electronic Materials:VOLUME104

作者:Edited by M. Stavola ; S. J. Pearton ; G. Davies  出版社:Cambridge University Press  出版日:1988/05/05 裝訂:平裝
定價:1845 元, 優惠價:9 1661
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Compound Semiconductor Electronics and Photonics:VOLUME421
滿額折

6.Compound Semiconductor Electronics and Photonics:VOLUME421

作者:Edited by S. J. Pearton ; F. Ren ; R. J. Shul ; C. -S. Wu  出版社:CAMBRIDGE UNIVERSITY PRESS  出版日:1996/10/14 裝訂:平裝
Contains 60 contributions comprising the proceedings of the April 1996 MRS symposium, held in San Francisco, covering a range of activity in the III-V compound semiconductor electronics and photonics
定價:1665 元, 優惠價:9 1499
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Power Semiconductor Materials and Devices:VOLUME483
90折

7.Power Semiconductor Materials and Devices:VOLUME483

作者:Edited by S. J. Pearton ; R. J. Shul ; E. Wolfgang ; F. Ren ; S. Tenconi  出版社:Cambridge University Press  出版日:1998/03/25 裝訂:平裝
These facsimiles of 60 papers from the December 1997 symposium cover the subject areas of applications for power electronics, diamond-based devices, processing, materials, silicon carbide technology,
定價:1845 元, 優惠價:9 1661
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Advanced III-V Compound Semiconductor Growth, Processing and Devices:VOLUME240
90折

8.Advanced III-V Compound Semiconductor Growth, Processing and Devices:VOLUME240

作者:Edited by S. J. Pearton ; D. K. Sadana ; J. M. Zavada  出版社:Cambridge University Press  出版日:1992/04/10 裝訂:平裝
Based on the Dec. 1991 MRS meeting in Boston, Mass., explores the topics of gas-source epitaxial growth and characterization; dry etching and deposition; contacts and dielectrics; devices and interfac
定價:1845 元, 優惠價:9 1661
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Compound Semiconductor Surface Passivation and Novel Device Processing:VOLUME573
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9.Compound Semiconductor Surface Passivation and Novel Device Processing:VOLUME573

作者:Edited by H. Hasegawa ; M. Hong ; Z. H. Lu ; S. J. Pearton  出版社:CAMBRIDGE UNIVERSITY PRESS  出版日:1999/07/13 裝訂:平裝
Compound semiconductors, such as GaAs and InP, typically have relatively high surface recombination velocities compared to silicon, and are subject to disruption of the surface during device processin
定價:1665 元, 優惠價:9 1499
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